Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA160N10T IXTA160N10T

Description
Manufacturer: IXYS Win Source Part Number: 1191233-IXTA160N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Family Name: IXTA160N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 430W (Tc) Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): STH15810-2; IRFS4310TRL; AUIRFS4310TRR; Introduction Date: December 20, 2006 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191233-IXTA160N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Family Name: IXTA160N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 430W (Tc) Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): STH15810-2; IRFS4310TRL; AUIRFS4310TRR; Introduction Date: December 20, 2006 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA160N10T - 1191233-IXTA160N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA160N10T
1191233-IXTA160N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA160N10T 1191233-IXTA160N10T
Manufacturer: IXYS Win Source Part Number: 1191233-IXTA160N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Family Name: IXTA160N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 430W (Tc) Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): STH15810-2; IRFS4310TRL; AUIRFS4310TRR; Introduction Date: December 20, 2006 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1191233-IXTA160N10T
Series: TrenchMV
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Family Name: IXTA160N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 430W (Tc)
Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): STH15810-2; IRFS4310TRL; AUIRFS4310TRR;
Introduction Date: December 20, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTA160N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA160N10T-ND
Single FETs, MOSFETs IXTA160N10T-ND
N-Channel 100V 160A (Tc) 430W (Tc) Surface Mount TO-263AA

N-Channel 100V 160A (Tc) 430W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA160N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA160N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA160N10T
MOSFET N-CH 100V 160A TO263

MOSFET N-CH 100V 160A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 160 Amps 100V 6.9 Rds

MOSFET 160 Amps 100V 6.9 Rds

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191233-IXTA160N10T IXTA160N10T-ND IXTA160N10T IXTA160N10T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA160N10T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
QG 132 nC
PD 430000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data