N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount TO-263AA
Manufacturer: IXYS
Win Source Part Number: 1191231-IXTA130N10T
Series: TrenchMV
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Family Name: IXTA130N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5080pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SQM120N10-09_GE3; BUK9610-100B; BUK7610-100B;
Introduction Date: December 14, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 130A TO263
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors |
| Product Number | 238-IXTA130N10T-ND | 1191231-IXTA130N10T | IXTA130N10T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA130N10T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Operating Mode | Enhancement | ||
| QG | 104 nC |
