Zilog IGBT Transistors IXST30N60C

Description
IGBT Transistors 55 Amps 600V 2.5 Rds
Description
IGBT Transistors 55 Amps 600V 2.5 Rds
Datasheet
Datasheet Summary
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The IXST30N60C is a high-speed IGBT transistor in a TO-268 surface-mount package, rated for 600 V collector-emitter voltage and 30 A continuous collector current at 90°C. It has a typical gate-emitter saturation voltage of 2.5 V at 30 A and a short-circuit withstand time of 10 µs under clamped inductive load conditions. The device features a maximum junction temperature of 150°C, a thermal resistance from junction to case of 0.62 K/W, and is qualified for use in AC motor control, DC servo drives, and UPS systems. It complies with the IXYS HDMOSTM process and supports surface-mount assembly with a single mounting screw. Switching times are specified as 70 to 120 ns for fall time under standard test conditions.

Datasheet Summary
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The IXST30N60C is a high-speed IGBT transistor in a TO-268 surface-mount package, rated for 600 V collector-emitter voltage and 30 A continuous collector current at 90°C. It has a typical gate-emitter saturation voltage of 2.5 V at 30 A and a short-circuit withstand time of 10 µs under clamped inductive load conditions. The device features a maximum junction temperature of 150°C, a thermal resistance from junction to case of 0.62 K/W, and is qualified for use in AC motor control, DC servo drives, and UPS systems. It complies with the IXYS HDMOSTM process and supports surface-mount assembly with a single mounting screw. Switching times are specified as 70 to 120 ns for fall time under standard test conditions.

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Sheung Wan, Hong Kong
IGBT Transistors
IXST30N60C
IGBT Transistors IXST30N60C
IGBT Transistors 55 Amps 600V 2.5 Rds

IGBT Transistors 55 Amps 600V 2.5 Rds

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXST30N60C
Product Name IGBT Transistors
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