Zilog Single FETs, MOSFETs IXSJ43N120R1K

The IXSJ43N120R1K is a 1200 V silicon carbide (SiC) power MOSFET designed for high-efficiency power conversion in applications such as EV charging, solar inverters, and motor drives. It is packaged in an ISO247-4L ceramic-based isolated package, measuring 20.80 to 21.45 mm in length and 15.49 to 16.24 mm in width, with a mass of 8 g. The device has a drain-source on-state resistance of 36 mΩ (typical) at 25 °C and supports a continuous drain current of 46 A at 25 °C. It features a gate charge of 79 nC, an input capacitance of 2343 pF, and an isolation voltage of 2500 V RMS for one minute. Thermal resistance from junction to case is 0.87 K/W. The MOSFET operates with a recommended gate voltage of 18 V on and 0 V off, and has a virtual junction temperature range from -40 °C to +150 °C.