Zilog Single FETs, MOSFETs IXSH65N120L3KHV

The IXSH65N120L3KHV is a 1200 V, 35 mΩ, 67 A silicon carbide MOSFET in a TO-247-4L package with a Kelvin source contact for improved gate control. It features a 175 °C operating junction temperature, low capacitance for high-speed switching, and an ultra-fast intrinsic body diode. The device supports a gate drive voltage range of -3.5 V to +18 V and has a thermal resistance from junction to case of 0.52 K/W. It meets RoHS standards and is designed for motor drives, EV charging, DC/DC converters, and switch-mode power supplies.