Zilog IGBTs - Single - IXSH45N100 IXSH45N100

Description
Manufacturer: IXYS Win Source Part Number: 1049708-IXSH45N100 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 45A Total Switching Energy(Ets): 15mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 45A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • IGBTs - Single - IXSH45N100 - 1049708-IXSH45N100 - Win Source Electronics
    Win Source Electronics
  • Transistor - 113663574 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - IGBTs - IXSH45N100 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049708-IXSH45N100 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 45A Total Switching Energy(Ets): 15mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 45A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXSH45N100 - 1049708-IXSH45N100 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXSH45N100
1049708-IXSH45N100
IGBTs - Single - IXSH45N100 1049708-IXSH45N100
Manufacturer: IXYS Win Source Part Number: 1049708-IXSH45N100 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 165nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 45A Total Switching Energy(Ets): 15mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 45A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049708-IXSH45N100
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 165nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXSH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 300W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 45A
Total Switching Energy(Ets): 15mJ (off)
Turn-on and Turn-off delay time: 80ns/400ns
Testing Conditions: 800V, 45A, 2.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 113663574 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
113663574
Transistor 113663574
IGBT TRANSISTOR, IGBT, SCSOA, 1000V, 50AMP. FREE 2 YEAR RADWELL WARRANTY

IGBT TRANSISTOR, IGBT, SCSOA, 1000V, 50AMP. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXSH45N100 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXSH45N100
Discrete Semiconductor Products - Transistors - IGBTs IXSH45N100
IGBT 1000V 75A 300W TO247

IGBT 1000V 75A 300W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049708-IXSH45N100 113663574 IXSH45N100
Product Name IGBTs - Single - IXSH45N100 Transistor Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.7 volts
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