Zilog Single FETs, MOSFETs IXSH40N120L2KHV

The IXSH40N120L2KHV is a 1200 V silicon carbide MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as solar inverters, EV charging, and motor drives. It has a drain-source on-state resistance of 80 mΩ at 25 °C and a continuous drain current of 41 A at 25 °C with a gate-source voltage of 18 V. The device features a Kelvin source contact for reduced gate drive losses, a virtual junction temperature rating of up to 175 °C, and a thermal resistance from junction to case of 0.6 K/W. It is RoHS compliant and rated for soldering temperatures up to 260 °C with a recommended mounting torque of 0.7 Nm for an M3 screw.