Manufacturer: IXYS
Win Source Part Number: 1049705-IXSH35N120A
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 150nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXSH)
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 300W
Pulsed Collector Current: 140A
Collector-emitter saturation voltage(Max): 4V @ 15V, 35A
Total Switching Energy(Ets): 10mJ (off)
Turn-on and Turn-off delay time: 80ns/400ns
Testing Conditions: 960V, 35A, 2.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
IGBT 1200V 70A 300W TO247 Product overview: IXSH35N120A from IXYS / Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 70A, 300W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 70A, 300W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXSH35N120A can be used for catalog matching and distributor lookup.
IGBT 1200V 70A 300W TO247
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049705-IXSH35N120A | 279-IXSH35N120A | IXSH35N120A |
| Product Name | IGBTs - Single - IXSH35N120A | 1200V 70A 300W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 4 volts |