Zilog IGBTs - Single - IXSH35N100A IXSH35N100A

Description
Manufacturer: IXYS Win Source Part Number: 1049704-IXSH35N100A Packaging: Bulk Mounting: Through Hole Input Type: Standard Gate Charge: 180nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 70A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 35A Total Switching Energy(Ets): 10mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 35A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
  • IGBTs - Single - IXSH35N100A - 1049704-IXSH35N100A - Win Source Electronics
    Win Source Electronics
  • Transistor - 48349426 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - IGBTs - IXSH35N100A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049704-IXSH35N100A Packaging: Bulk Mounting: Through Hole Input Type: Standard Gate Charge: 180nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 70A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 35A Total Switching Energy(Ets): 10mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 35A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXSH35N100A - 1049704-IXSH35N100A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXSH35N100A
1049704-IXSH35N100A
IGBTs - Single - IXSH35N100A 1049704-IXSH35N100A
Manufacturer: IXYS Win Source Part Number: 1049704-IXSH35N100A Packaging: Bulk Mounting: Through Hole Input Type: Standard Gate Charge: 180nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 70A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 140A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 35A Total Switching Energy(Ets): 10mJ (off) Turn-on and Turn-off delay time: 80ns/400ns Testing Conditions: 800V, 35A, 2.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049704-IXSH35N100A
Packaging: Bulk
Mounting: Through Hole
Input Type: Standard
Gate Charge: 180nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXSH)
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 300W
Pulsed Collector Current: 140A
Collector-emitter saturation voltage(Max): 3.5V @ 15V, 35A
Total Switching Energy(Ets): 10mJ (off)
Turn-on and Turn-off delay time: 80ns/400ns
Testing Conditions: 800V, 35A, 2.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 48349426 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
48349426
Transistor 48349426
TRANSISTOR, SOP28, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, SOP28, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXSH35N100A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXSH35N100A
Discrete Semiconductor Products - Transistors - IGBTs IXSH35N100A
IGBT 1000V 70A 300W TO247AD

IGBT 1000V 70A 300W TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049704-IXSH35N100A 48349426 IXSH35N100A
Product Name IGBTs - Single - IXSH35N100A Transistor Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 3.5 volts
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