Zilog IGBTs - Single - IXSH30N60B2D1 IXSH30N60B2D1

Description
Manufacturer: IXYS Win Source Part Number: 1049700-IXSH30N60B2D 1 Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 30ns IGBT Type: PT Input Type: Standard Gate Charge: 50nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 48A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 24A Total Switching Energy(Ets): 550μJ (off) Turn-on and Turn-off delay time: 30ns/130ns Testing Conditions: 400V, 24A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: IXYS Win Source Part Number: 1049700-IXSH30N60B2D 1 Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 30ns IGBT Type: PT Input Type: Standard Gate Charge: 50nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 48A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 24A Total Switching Energy(Ets): 550μJ (off) Turn-on and Turn-off delay time: 30ns/130ns Testing Conditions: 400V, 24A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
IGBTs - Single - IXSH30N60B2D1 - 1049700-IXSH30N60B2D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXSH30N60B2D1
1049700-IXSH30N60B2D1
IGBTs - Single - IXSH30N60B2D1 1049700-IXSH30N60B2D1
Manufacturer: IXYS Win Source Part Number: 1049700-IXSH30N60B2D 1 Packaging: Bulk Mounting: Through Hole Reverse Recovery Time (trr): 30ns IGBT Type: PT Input Type: Standard Gate Charge: 50nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXSH) Maximum Current Collector: 48A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 24A Total Switching Energy(Ets): 550μJ (off) Turn-on and Turn-off delay time: 30ns/130ns Testing Conditions: 400V, 24A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049700-IXSH30N60B2D1
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 30ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 50nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXSH)
Maximum Current Collector: 48A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 24A
Total Switching Energy(Ets): 550μJ (off)
Turn-on and Turn-off delay time: 30ns/130ns
Testing Conditions: 400V, 24A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - IXSH30N60B2D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXSH30N60B2D1-ND
Single IGBTs IXSH30N60B2D1-ND
IGBT PT 600V 48A 250W Through Hole TO-247AD

IGBT PT 600V 48A 250W Through Hole TO-247AD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXSH30N60B2D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXSH30N60B2D1
Discrete Semiconductor Products - Transistors - IGBTs IXSH30N60B2D1
IGBT 600V 48A 250W TO247

IGBT 600V 48A 250W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049700-IXSH30N60B2D1 IXSH30N60B2D1-ND IXSH30N60B2D1
Product Name IGBTs - Single - IXSH30N60B2D1 Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.5 volts
PD 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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