Zilog Single FETs, MOSFETs IXSH20N120L2KHV

The IXSH20N120L2KHV is a 1200 V silicon carbide MOSFET in a TO-247-4L package, designed for high-efficiency switching applications such as EV charging and UPS systems. It has a drain-source on-state resistance of 160 mΩ at 25 °C and a continuous drain current of 20 A at 25 °C. The device features a Kelvin source connection for low-inductance gate drive, an ultra-fast intrinsic body diode, and a maximum virtual junction temperature of 175 °C. Thermal resistance from junction to case is 1.1 K/W. The part is MSL1 rated and compliant with RoHS standards.