Zilog FETs - Single - IXKC20N60C IXKC20N60C

Description
Manufacturer: IXYS Win Source Part Number: 1191217-IXKC20N60C Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS220 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 190mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 114nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191217-IXKC20N60C Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS220 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 190mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 114nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXKC20N60C - 1191217-IXKC20N60C - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXKC20N60C
1191217-IXKC20N60C
FETs - Single - IXKC20N60C 1191217-IXKC20N60C
Manufacturer: IXYS Win Source Part Number: 1191217-IXKC20N60C Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS220 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS220 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 190mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 114nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191217-IXKC20N60C
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: ISOPLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: ISOPLUS220
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 190mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.9V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 114nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V

Buy Now
Single FETs, MOSFETs - 238-IXKC20N60C-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXKC20N60C-ND
Single FETs, MOSFETs 238-IXKC20N60C-ND
N-Channel 600V 15A (Tc) Through Hole ISOPLUS220™

N-Channel 600V 15A (Tc) Through Hole ISOPLUS220™

Buy Now Datasheet
Transistor - 141089073 - Radwell International
Willingboro, NJ, United States
Transistor
141089073
Transistor 141089073
TRANSISTOR, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220-3. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXKC20N60C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXKC20N60C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXKC20N60C
MOSFET N-CH 600V 15A ISOPLUS220

MOSFET N-CH 600V 15A ISOPLUS220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors RF Transistors RF Transistors
Product Number 1191217-IXKC20N60C 238-IXKC20N60C-ND 141089073 IXKC20N60C
Product Name FETs - Single - IXKC20N60C Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
QG 114 nC
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