Zilog Single IGBTs IXGX120N60A3

Description
IGBT PT 600V 200A 780W Through Hole PLUS247™-3
Request a Quote Datasheet
Description
IGBT PT 600V 200A 780W Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXGX120N60A3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGX120N60A3-ND
Single IGBTs IXGX120N60A3-ND
IGBT PT 600V 200A 780W Through Hole PLUS247™-3

IGBT PT 600V 200A 780W Through Hole PLUS247™-3

Buy Now Datasheet
IGBTs - Single - IXGX120N60A3 - 1049682-IXGX120N60A3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGX120N60A3
1049682-IXGX120N60A3
IGBTs - Single - IXGX120N60A3 1049682-IXGX120N60A3
Manufacturer: IXYS Win Source Part Number: 1049682-IXGX120N60A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 450nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Maximum Current Collector: 200A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 780W Pulsed Collector Current: 600A Collector-emitter saturation voltage(Max): 1.35V @ 15V, 100A Total Switching Energy(Ets): 2.7mJ (on), 6.6mJ (off) Turn-on and Turn-off delay time: 39ns/295ns Testing Conditions: 480V, 100A, 1.5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049682-IXGX120N60A3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 450nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Maximum Current Collector: 200A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 780W
Pulsed Collector Current: 600A
Collector-emitter saturation voltage(Max): 1.35V @ 15V, 100A
Total Switching Energy(Ets): 2.7mJ (on), 6.6mJ (off)
Turn-on and Turn-off delay time: 39ns/295ns
Testing Conditions: 480V, 100A, 1.5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
IGBT 600V 200A 780W PLUS247 - 401-IXGX120N60A3 - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 200A 780W PLUS247
401-IXGX120N60A3
IGBT 600V 200A 780W PLUS247 401-IXGX120N60A3
IGBT 600V 200A 780W PLUS247

IGBT 600V 200A 780W PLUS247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXGX120N60A3
IGBT Transistors IXGX120N60A3
IGBT Transistors 120 Amps 600V

IGBT Transistors 120 Amps 600V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGX120N60A3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGX120N60A3
Discrete Semiconductor Products - Transistors - IGBTs IXGX120N60A3
IGBT 600V 200A 780W PLUS247

IGBT 600V 200A 780W PLUS247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGX120N60A3-ND 1049682-IXGX120N60A3 401-IXGX120N60A3 IXGX120N60A3 IXGX120N60A3
Product Name Single IGBTs IGBTs - Single - IXGX120N60A3 IGBT 600V 200A 780W PLUS247 IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 Variant SOT3; PLUS247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
Structure PT
VCE(on) 1.35 volts 1.2 volts
Unlock Full Specs
to access all available technical data