The IXGT25N250 is a high-voltage insulated gate bipolar transistor designed for capacitor discharge and pulser circuits, housed in a TO-268 package. It has a collector-emitter voltage rating of 2500 V and a continuous collector current rating of 60 A at 25°C, decreasing to 25 A at 110°C. The device features a typical saturation voltage of 2.9 V at 25°C and 15 V gate-emitter voltage, with a maximum transient gate-emitter voltage of ±30 V. It supports a peak pulse current of 200 A for 1 ms and has a maximum power dissipation of 250 W. The thermal resistance from junction to case is 0.25 °C/W, and the operating junction temperature range is -55°C to 150°C. The molding compound meets UL 94 V-0 flammability classification. The TO-268 package allows for surface mounting with an isolated mounting screw hole.
IGBT NPT 2500V 60A TO-268AA
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGT25N250-ND |
| Product Name | Single IGBTs |
| Package Type | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
