IXYS Integrated Circuits Division IGBT Transistors IXGT20N 60B

The IXGT20N60B is an IGBT transistor in a TO-268 (D3) surface-mount package, rated for 600 V collector-emitter voltage and 40 A continuous collector current at 25°C. It has a typical collector-emitter saturation voltage of 1.7 V at 20 A and 25°C, with a maximum junction temperature of 150°C. The device features a standard TO-268 package with a weight of 4 g, a thermal resistance junction-to-case of 0.83 K/W, and is qualified for high-frequency switching applications in motor control and power supplies. It meets JEDEC TO-268 surface-mount standards and supports isolated mounting via a single screw.