Zilog Single IGBTs IXGR48N60C3D1

Description
IGBT PT 600V 56A 125W Through Hole ISOPLUS247™
Request a Quote Datasheet
Description
IGBT PT 600V 56A 125W Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXGR48N60C3D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGR48N60C3D1-ND
Single IGBTs IXGR48N60C3D1-ND
IGBT PT 600V 56A 125W Through Hole ISOPLUS247™

IGBT PT 600V 56A 125W Through Hole ISOPLUS247™

Buy Now Datasheet
Single IGBTs - IXGR48N60C3D1 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IXGR48N60C3D1
Single IGBTs IXGR48N60C3D1
IGBT 600V 56A 125W ISOPLUS247

IGBT 600V 56A 125W ISOPLUS247

Supplier's Site Datasheet
IGBTs - Single - IXGR48N60C3D1 - 1049677-IXGR48N60C3D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGR48N60C3D1
1049677-IXGR48N60C3D1
IGBTs - Single - IXGR48N60C3D1 1049677-IXGR48N60C3D1
Manufacturer: IXYS Win Source Part Number: 1049677-IXGR48N60C3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 77nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Maximum Current Collector: 56A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 230A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A Total Switching Energy(Ets): 410μJ (on), 230μJ (off) Turn-on and Turn-off delay time: 19ns/60ns Testing Conditions: 400V, 30A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049677-IXGR48N60C3D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 77nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOPLUS247
Maximum Current Collector: 56A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 230A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A
Total Switching Energy(Ets): 410μJ (on), 230μJ (off)
Turn-on and Turn-off delay time: 19ns/60ns
Testing Conditions: 400V, 30A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGR48N60C3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGR48N60C3D1
Discrete Semiconductor Products - Transistors - IGBTs IXGR48N60C3D1
IGBT 600V 56A 125W ISOPLUS247

IGBT 600V 56A 125W ISOPLUS247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXGR48N60C3D1
IGBT Transistors IXGR48N60C3D1
IGBT Transistors 48 Amps 600V

IGBT Transistors 48 Amps 600V

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGR48N60C3D1-ND IXGR48N60C3D1 1049677-IXGR48N60C3D1 IXGR48N60C3D1 IXGR48N60C3D1
Product Name Single IGBTs Single IGBTs IGBTs - Single - IXGR48N60C3D1 Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 SOT3; ISOPLUS247
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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