Zilog IGBTs - Single - IXGR32N60CD1 IXGR32N60CD1

Description
Manufacturer: IXYS Win Source Part Number: 1049674-IXGR32N60CD1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 140W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 32A Total Switching Energy(Ets): 320μJ (off) Turn-on and Turn-off delay time: 25ns/85ns Testing Conditions: 480V, 32A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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Description
Manufacturer: IXYS Win Source Part Number: 1049674-IXGR32N60CD1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 140W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 32A Total Switching Energy(Ets): 320μJ (off) Turn-on and Turn-off delay time: 25ns/85ns Testing Conditions: 480V, 32A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXGR32N60CD1 - 1049674-IXGR32N60CD1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGR32N60CD1
1049674-IXGR32N60CD1
IGBTs - Single - IXGR32N60CD1 1049674-IXGR32N60CD1
Manufacturer: IXYS Win Source Part Number: 1049674-IXGR32N60CD1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns Input Type: Standard Gate Charge: 110nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 140W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 32A Total Switching Energy(Ets): 320μJ (off) Turn-on and Turn-off delay time: 25ns/85ns Testing Conditions: 480V, 32A, 4.7 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049674-IXGR32N60CD1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
Input Type: Standard
Gate Charge: 110nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOPLUS247
Maximum Current Collector: 45A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 140W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 32A
Total Switching Energy(Ets): 320μJ (off)
Turn-on and Turn-off delay time: 25ns/85ns
Testing Conditions: 480V, 32A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 148174168 - Radwell International
Willingboro, NJ, United States
Transistor
148174168
Transistor 148174168
DISCONTINUED BY MANUFACTURER, IGBT TRANSISTORS, DISCRETE IGBT, 600V, 45 AMP, SMD, ISOPLUS247-3 PACKAGING. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, IGBT TRANSISTORS, DISCRETE IGBT, 600V, 45 AMP, SMD, ISOPLUS247-3 PACKAGING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXGR32N60CD1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGR32N60CD1
Discrete Semiconductor Products - Transistors - IGBTs IXGR32N60CD1
IGBT 600V 45A 140W ISOPLUS247

IGBT 600V 45A 140W ISOPLUS247

Supplier's Site
Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247 - 401-IXGR32N60CD1 - Utmel Electronic Limited
Hong Kong, China
Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247
401-IXGR32N60CD1
Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247 401-IXGR32N60CD1
Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247

Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049674-IXGR32N60CD1 148174168 IXGR32N60CD1 401-IXGR32N60CD1
Product Name IGBTs - Single - IXGR32N60CD1 Transistor Discrete Semiconductor Products - Transistors - IGBTs Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247
VCE(on) 2.7 volts 2.1 volts
PD 140000 milliwatts 140000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; ISOPLUS247
Packing Method Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
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