IXYS Corporation IGBTs - Single - IXGQ90N33TCD1 IXGQ90N33TCD1

Description
Manufacturer: IXYS Win Source Part Number: 1049673-IXGQ90N33TCD 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 69nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-3P Maximum Current Collector: 90A VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 200W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 45A Alternative Parts (Cross-Reference): STGW60H65DF; IXGQ90N33TC; IXGQ90N33TCD1; Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
  • IGBTs - Single - IXGQ90N33TCD1 - 1049673-IXGQ90N33TCD1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - IXGQ90N33TCD1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1049673-IXGQ90N33TCD 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 69nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-3P Maximum Current Collector: 90A VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 200W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 45A Alternative Parts (Cross-Reference): STGW60H65DF; IXGQ90N33TC; IXGQ90N33TCD1; Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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IGBTs - Single - IXGQ90N33TCD1 - 1049673-IXGQ90N33TCD1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGQ90N33TCD1
1049673-IXGQ90N33TCD1
IGBTs - Single - IXGQ90N33TCD1 1049673-IXGQ90N33TCD1
Manufacturer: IXYS Win Source Part Number: 1049673-IXGQ90N33TCD 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 69nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-3P Maximum Current Collector: 90A VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 200W Collector-emitter saturation voltage(Max): 1.8V @ 15V, 45A Alternative Parts (Cross-Reference): STGW60H65DF; IXGQ90N33TC; IXGQ90N33TCD1; Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049673-IXGQ90N33TCD1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 69nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-3P
Maximum Current Collector: 90A
VCEO Maximum Collector-Emitter Breakdown Voltage: 330V
Maximum Power Dissipation: 200W
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 45A
Alternative Parts (Cross-Reference): STGW60H65DF; IXGQ90N33TC; IXGQ90N33TCD1;
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - IGBTs - IXGQ90N33TCD1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGQ90N33TCD1
Discrete Semiconductor Products - Transistors - IGBTs IXGQ90N33TCD1
IGBT 330V 90A 200W TO3P

IGBT 330V 90A 200W TO3P

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049673-IXGQ90N33TCD1 IXGQ90N33TCD1
Product Name IGBTs - Single - IXGQ90N33TCD1 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.8 volts
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