Manufacturer: IXYS
Win Source Part Number: 1049672-IXGQ85N33PCD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 250ns
Input Type: Standard
Gate Charge: 80nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 85A
VCEO Maximum Collector-Emitter Breakdown Voltage: 330V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 3V @ 15V, 100A
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 30
IGBT 330V 85A 150W Through Hole TO-3P
IGBT 330V 85A 150W TO3P
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049672-IXGQ85N33PCD1 | IXGQ85N33PCD1-ND | IXGQ85N33PCD1 |
| Product Name | IGBTs - Single - IXGQ85N33PCD1 | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 3 volts |
