Zilog Single IGBTs IXGP30N60C3

Description
IGBT PT 600V 60A 220W Through Hole TO-220-3
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Description
IGBT PT 600V 60A 220W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXGP30N60C3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGP30N60C3-ND
Single IGBTs IXGP30N60C3-ND
IGBT PT 600V 60A 220W Through Hole TO-220-3

IGBT PT 600V 60A 220W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - IXGP30N60C3 - 1049663-IXGP30N60C3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGP30N60C3
1049663-IXGP30N60C3
IGBTs - Single - IXGP30N60C3 1049663-IXGP30N60C3
Manufacturer: IXYS Win Source Part Number: 1049663-IXGP30N60C3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 38nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 220W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 270μJ (on), 90μJ (off) Turn-on and Turn-off delay time: 16ns/42ns Testing Conditions: 300V, 20A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049663-IXGP30N60C3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 38nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 220W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
Total Switching Energy(Ets): 270μJ (on), 90μJ (off)
Turn-on and Turn-off delay time: 16ns/42ns
Testing Conditions: 300V, 20A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
IGBT Transistors
IXGP30N60C3
IGBT Transistors IXGP30N60C3
IGBT Transistors 30 Amps 600V

IGBT Transistors 30 Amps 600V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGP30N60C3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGP30N60C3
Discrete Semiconductor Products - Transistors - IGBTs IXGP30N60C3
IGBT 600V 60A 220W TO220AB

IGBT 600V 60A 220W TO220AB

Supplier's Site
IGBT 600V 60A 220W TO220AB - 401-IXGP30N60C3 - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 60A 220W TO220AB
401-IXGP30N60C3
IGBT 600V 60A 220W TO220AB 401-IXGP30N60C3
IGBT 600V 60A 220W TO220AB

IGBT 600V 60A 220W TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGP30N60C3-ND 1049663-IXGP30N60C3 IXGP30N60C3 IXGP30N60C3 401-IXGP30N60C3
Product Name Single IGBTs IGBTs - Single - IXGP30N60C3 IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs IGBT 600V 60A 220W TO220AB
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
Structure PT
VCE(on) 3 volts 2.6 volts
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