INSULATED GATE BIPOLAR TRANSISTOR, 24A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: IXYS
Win Source Part Number: 1049661-IXGP12N60CD1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 35ns
Input Type: Standard
Gate Charge: 32nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 48A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 12A
Total Switching Energy(Ets): 90μJ (off)
Turn-on and Turn-off delay time: 20ns/60ns
Testing Conditions: 480V, 12A, 18 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in HVAC, Consumer Electronics, Power Management
IGBT 600V 24A 100W TO220
| Radwell International | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 95528293 | 1049661-IXGP12N60CD1 | IXGP12N60CD1 |
| Product Name | Transistor | IGBTs - Single - IXGP12N60CD1 | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.7 volts |
