IXYS Corporation IGBTs - Single - IXGM25N100A IXGM25N100A

Description
Manufacturer: IXYS Win Source Part Number: 65691-IXGM25N100A Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 200ns Current - Collector Pulsed (Icm): 100A Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 180nC Test Condition: 800V, 25A, 33Ohm, 15V Part Status: Last Time Buy Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AE Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-204AE Current - Collector (Ic) (Maximum): 50A Voltage - Collector Emitter Breakdown (Maximum): 1000V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Maximum Power: 200W Vce(on) (Maximum) at Vge, Ic: 4V at 15V, 25A Td (on/off) at 25°C: 100ns/500ns
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Description
Manufacturer: IXYS Win Source Part Number: 65691-IXGM25N100A Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 200ns Current - Collector Pulsed (Icm): 100A Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 180nC Test Condition: 800V, 25A, 33Ohm, 15V Part Status: Last Time Buy Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AE Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-204AE Current - Collector (Ic) (Maximum): 50A Voltage - Collector Emitter Breakdown (Maximum): 1000V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Maximum Power: 200W Vce(on) (Maximum) at Vge, Ic: 4V at 15V, 25A Td (on/off) at 25°C: 100ns/500ns
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Suppliers

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IGBTs - Single - IXGM25N100A - 65691-IXGM25N100A - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGM25N100A
65691-IXGM25N100A
IGBTs - Single - IXGM25N100A 65691-IXGM25N100A
Manufacturer: IXYS Win Source Part Number: 65691-IXGM25N100A Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 200ns Current - Collector Pulsed (Icm): 100A Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 180nC Test Condition: 800V, 25A, 33Ohm, 15V Part Status: Last Time Buy Categories: Discrete Semiconductor Products Supplier Device Package: TO-204AE Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-204AE Current - Collector (Ic) (Maximum): 50A Voltage - Collector Emitter Breakdown (Maximum): 1000V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Maximum Power: 200W Vce(on) (Maximum) at Vge, Ic: 4V at 15V, 25A Td (on/off) at 25°C: 100ns/500ns

Manufacturer: IXYS
Win Source Part Number: 65691-IXGM25N100A
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 200ns
Current - Collector Pulsed (Icm): 100A
Switching Energy: 5mJ (off)
Input Type: Standard
Gate Charge: 180nC
Test Condition: 800V, 25A, 33Ohm, 15V
Part Status: Last Time Buy
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-204AE
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-204AE
Current - Collector (Ic) (Maximum): 50A
Voltage - Collector Emitter Breakdown (Maximum): 1000V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 20
MSL Level: 1 (Unlimited)
Maximum Power: 200W
Vce(on) (Maximum) at Vge, Ic: 4V at 15V, 25A
Td (on/off) at 25°C: 100ns/500ns

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Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGM25N100A
Discrete Semiconductor Products - Transistors - IGBTs IXGM25N100A
IGBT 1000V 50A 200W TO204AE

IGBT 1000V 50A 200W TO204AE

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Insulated Gate Bipolar Transistors (IGBT)
Product Number 65691-IXGM25N100A IXGM25N100A
Product Name IGBTs - Single - IXGM25N100A Discrete Semiconductor Products - Transistors - IGBTs
QG 180 nC
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