Zilog IGBTs - Single - IXGH90N60B3 IXGH90N60B3

Description
Manufacturer: IXYS Win Source Part Number: 1049653-IXGH90N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 172nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 660W Pulsed Collector Current: 500A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 90A Total Switching Energy(Ets): 1.32mJ (on), 1.37mJ (off) Turn-on and Turn-off delay time: 31ns/150ns Testing Conditions: 480V, 60A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049653-IXGH90N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 172nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 660W Pulsed Collector Current: 500A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 90A Total Switching Energy(Ets): 1.32mJ (on), 1.37mJ (off) Turn-on and Turn-off delay time: 31ns/150ns Testing Conditions: 480V, 60A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Suppliers

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IGBTs - Single - IXGH90N60B3 - 1049653-IXGH90N60B3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH90N60B3
1049653-IXGH90N60B3
IGBTs - Single - IXGH90N60B3 1049653-IXGH90N60B3
Manufacturer: IXYS Win Source Part Number: 1049653-IXGH90N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 172nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 660W Pulsed Collector Current: 500A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 90A Total Switching Energy(Ets): 1.32mJ (on), 1.37mJ (off) Turn-on and Turn-off delay time: 31ns/150ns Testing Conditions: 480V, 60A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049653-IXGH90N60B3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 172nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 660W
Pulsed Collector Current: 500A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 90A
Total Switching Energy(Ets): 1.32mJ (on), 1.37mJ (off)
Turn-on and Turn-off delay time: 31ns/150ns
Testing Conditions: 480V, 60A, 2 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH90N60B3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH90N60B3
Discrete Semiconductor Products - Transistors - IGBTs IXGH90N60B3
IGBT 600V 75A 660W TO247

IGBT 600V 75A 660W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049653-IXGH90N60B3 IXGH90N60B3
Product Name IGBTs - Single - IXGH90N60B3 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.8 volts
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