Zilog Single IGBTs IXGH56N60A3

Description
IGBT PT 600V 150A 330W Through Hole TO-247AD
Request a Quote Datasheet
Description
IGBT PT 600V 150A 330W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXGH56N60A3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH56N60A3-ND
Single IGBTs IXGH56N60A3-ND
IGBT PT 600V 150A 330W Through Hole TO-247AD

IGBT PT 600V 150A 330W Through Hole TO-247AD

Buy Now Datasheet
IGBTs - Single - IXGH56N60A3 - 1049643-IXGH56N60A3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH56N60A3
1049643-IXGH56N60A3
IGBTs - Single - IXGH56N60A3 1049643-IXGH56N60A3
Manufacturer: IXYS Win Source Part Number: 1049643-IXGH56N60A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 140nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 330W Pulsed Collector Current: 370A Collector-emitter saturation voltage(Max): 1.35V @ 15V, 44A Total Switching Energy(Ets): 1mJ (on), 3.75mJ (off) Turn-on and Turn-off delay time: 26ns/310ns Testing Conditions: 480V, 44A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049643-IXGH56N60A3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 140nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 330W
Pulsed Collector Current: 370A
Collector-emitter saturation voltage(Max): 1.35V @ 15V, 44A
Total Switching Energy(Ets): 1mJ (on), 3.75mJ (off)
Turn-on and Turn-off delay time: 26ns/310ns
Testing Conditions: 480V, 44A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH56N60A3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH56N60A3
Discrete Semiconductor Products - Transistors - IGBTs IXGH56N60A3
IGBT 600V 150A 330W TO247

IGBT 600V 150A 330W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
IXGH56N60A3
IGBT Modules IXGH56N60A3
IGBT Modules GenX3 600V IGBTs

IGBT Modules GenX3 600V IGBTs

Buy Now Datasheet
IGBT - 124154519 - Radwell International
Willingboro, NJ, United States
IGBT, 600V, 56A, 330W, TO-247. FREE 2 YEAR RADWELL WARRANTY

IGBT, 600V, 56A, 330W, TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH56N60A3-ND 1049643-IXGH56N60A3 IXGH56N60A3 IXGH56N60A3 124154519
Product Name Single IGBTs IGBTs - Single - IXGH56N60A3 Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules IGBT
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXGH)
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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