Zilog Single IGBTs IXGH36N60B3D1

Description
IGBT PT 600V 250W Through Hole TO-247AD
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Description
IGBT PT 600V 250W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single IGBTs - IXGH36N60B3D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH36N60B3D1-ND
Single IGBTs IXGH36N60B3D1-ND
IGBT PT 600V 250W Through Hole TO-247AD

IGBT PT 600V 250W Through Hole TO-247AD

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IGBTs - Single - IXGH36N60B3D1 - 1049618-IXGH36N60B3D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH36N60B3D1
1049618-IXGH36N60B3D1
IGBTs - Single - IXGH36N60B3D1 1049618-IXGH36N60B3D1
Manufacturer: IXYS Win Source Part Number: 1049618-IXGH36N60B3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 80nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 250W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 30A Total Switching Energy(Ets): 540μJ (on), 800μJ (off) Turn-on and Turn-off delay time: 19ns/125ns Testing Conditions: 400V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049618-IXGH36N60B3D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 80nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 30A
Total Switching Energy(Ets): 540μJ (on), 800μJ (off)
Turn-on and Turn-off delay time: 19ns/125ns
Testing Conditions: 400V, 30A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - IGBTs - IXGH36N60B3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH36N60B3D1
Discrete Semiconductor Products - Transistors - IGBTs IXGH36N60B3D1
IGBT 600V 250W TO247AD

IGBT 600V 250W TO247AD

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXGH36N60B3D1
IGBT Transistors IXGH36N60B3D1
IGBT Transistors 36 Amps 600V

IGBT Transistors 36 Amps 600V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH36N60B3D1-ND 1049618-IXGH36N60B3D1 IXGH36N60B3D1 IXGH36N60B3D1
Product Name Single IGBTs IGBTs - Single - IXGH36N60B3D1 Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXGH)
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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