Zilog Discrete Semiconductor Products - Transistors - IGBTs - Single IXGH32N90B2D1

Description
Win Source Part Number: 1222329-IXGH32N90B2D 1 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: HiPerFAST™ Package: Tube Standard Package: 30 Power - Max: 300 W Reverse Recovery Time (trr): 190 ns IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 64 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 89 nC Td (on/off) @ 25°C: 20ns/260ns Test Condition: 720V, 32A, 5Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXGH32
Request a Quote Datasheet
Description
Win Source Part Number: 1222329-IXGH32N90B2D 1 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: HiPerFAST™ Package: Tube Standard Package: 30 Power - Max: 300 W Reverse Recovery Time (trr): 190 ns IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 64 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 89 nC Td (on/off) @ 25°C: 20ns/260ns Test Condition: 720V, 32A, 5Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXGH32
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1222329-IXGH32N90B2D1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1222329-IXGH32N90B2D1
Discrete Semiconductor Products - Transistors - IGBTs - Single 1222329-IXGH32N90B2D1
Win Source Part Number: 1222329-IXGH32N90B2D 1 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: HiPerFAST™ Package: Tube Standard Package: 30 Power - Max: 300 W Reverse Recovery Time (trr): 190 ns IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 64 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 89 nC Td (on/off) @ 25°C: 20ns/260ns Test Condition: 720V, 32A, 5Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXGH32

Win Source Part Number: 1222329-IXGH32N90B2D1
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: HiPerFAST™
Package: Tube
Standard Package: 30
Power - Max: 300 W
Reverse Recovery Time (trr): 190 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 64 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
Switching Energy: 2.2mJ (off)
Input Type: Standard
Gate Charge: 89 nC
Td (on/off) @ 25°C: 20ns/260ns
Test Condition: 720V, 32A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXGH32

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IXGH32N90B2D1
IGBT Transistors IXGH32N90B2D1
IGBT Transistors 32 Amps 900V 2.7 Rds

IGBT Transistors 32 Amps 900V 2.7 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH32N90B2D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH32N90B2D1
Discrete Semiconductor Products - Transistors - IGBTs IXGH32N90B2D1
IGBT 900V 64A 300W TO247

IGBT 900V 64A 300W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1222329-IXGH32N90B2D1 IXGH32N90B2D1 IXGH32N90B2D1
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCES 900 volts
Unlock Full Specs
to access all available technical data