Win Source Part Number: 1222329-IXGH32N90B2D
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFAST™
Package: Tube
Standard Package: 30
Power - Max: 300 W
Reverse Recovery Time (trr): 190 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 64 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
Switching Energy: 2.2mJ (off)
Input Type: Standard
Gate Charge: 89 nC
Td (on/off) @ 25°C: 20ns/260ns
Test Condition: 720V, 32A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXGH32
IGBT 900V 64A 300W TO247
IGBT Transistors 32 Amps 900V 2.7 Rds
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1222329-IXGH32N90B2D1 | IXGH32N90B2D1 | IXGH32N90B2D1 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCES | 900 volts |