Zilog IGBTs - Single - IXGH32N100A3 IXGH32N100A3

Description
Manufacturer: IXYS Win Source Part Number: 1049605-IXGH32N100A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 87nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 32A Total Switching Energy(Ets): 2.6mJ (on), 9.5mJ (off) Turn-on and Turn-off delay time: 24ns/385ns Testing Conditions: 800V, 32A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049605-IXGH32N100A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 87nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 32A Total Switching Energy(Ets): 2.6mJ (on), 9.5mJ (off) Turn-on and Turn-off delay time: 24ns/385ns Testing Conditions: 800V, 32A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
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Suppliers

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IGBTs - Single - IXGH32N100A3 - 1049605-IXGH32N100A3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH32N100A3
1049605-IXGH32N100A3
IGBTs - Single - IXGH32N100A3 1049605-IXGH32N100A3
Manufacturer: IXYS Win Source Part Number: 1049605-IXGH32N100A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 87nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 300W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 32A Total Switching Energy(Ets): 2.6mJ (on), 9.5mJ (off) Turn-on and Turn-off delay time: 24ns/385ns Testing Conditions: 800V, 32A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049605-IXGH32N100A3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 87nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 300W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 32A
Total Switching Energy(Ets): 2.6mJ (on), 9.5mJ (off)
Turn-on and Turn-off delay time: 24ns/385ns
Testing Conditions: 800V, 32A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH32N100A3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH32N100A3
Discrete Semiconductor Products - Transistors - IGBTs IXGH32N100A3
IGBT 1000V 75A 300W TO247AD

IGBT 1000V 75A 300W TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049605-IXGH32N100A3 IXGH32N100A3
Product Name IGBTs - Single - IXGH32N100A3 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.2 volts
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