Zilog Single IGBTs IXGH30N60C3D1

Description
IGBT 600V 60A 220W Through Hole TO-247AD
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Description
IGBT 600V 60A 220W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - IXGH30N60C3D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH30N60C3D1-ND
Single IGBTs IXGH30N60C3D1-ND
IGBT 600V 60A 220W Through Hole TO-247AD

IGBT 600V 60A 220W Through Hole TO-247AD

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IGBTs - Single - IXGH30N60C3D1 - 1049602-IXGH30N60C3D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH30N60C3D1
1049602-IXGH30N60C3D1
IGBTs - Single - IXGH30N60C3D1 1049602-IXGH30N60C3D1
Manufacturer: IXYS Win Source Part Number: 1049602-IXGH30N60C3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns Input Type: Standard Gate Charge: 38nC Family Name: IXGH30N60C3D1 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 220W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 270μJ (on), 90μJ (off) Turn-on and Turn-off delay time: 16ns/42ns Testing Conditions: 300V, 20A, 5 Ohm, 15V Alternative Parts (Cross-Reference): STGW20NC60V; STGW35HF60WDI; STGW30NC60WD; Introduction Date: November 10, 2008 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049602-IXGH30N60C3D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
Input Type: Standard
Gate Charge: 38nC
Family Name: IXGH30N60C3D1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 220W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
Total Switching Energy(Ets): 270μJ (on), 90μJ (off)
Turn-on and Turn-off delay time: 16ns/42ns
Testing Conditions: 300V, 20A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): STGW20NC60V; STGW35HF60WDI; STGW30NC60WD;
Introduction Date: November 10, 2008
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH30N60C3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH30N60C3D1
Discrete Semiconductor Products - Transistors - IGBTs IXGH30N60C3D1
IGBT 600V 60A 220W TO247

IGBT 600V 60A 220W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
IXGH30N60C3D1
IGBT Modules IXGH30N60C3D1
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode

IGBT Modules High Frequency Range 40khz C-IGBT w/Diode

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH30N60C3D1-ND 1049602-IXGH30N60C3D1 IXGH30N60C3D1 IXGH30N60C3D1
Product Name Single IGBTs IGBTs - Single - IXGH30N60C3D1 Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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