IGBT 1000V 50A 200W Through Hole TO-247AD
Manufacturer: IXYS
Win Source Part Number: 1049586-IXGH25N100A
Packaging: Bulk
Mounting: Through Hole
Input Type: Standard
Gate Charge: 130nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 4V @ 15V, 25A
Total Switching Energy(Ets): 5mJ (off)
Turn-on and Turn-off delay time: 100ns/500ns
Testing Conditions: 800V, 25A, 33 Ohm, 15V
Alternative Parts (Cross-Reference): IRG4PF50WPBF; IXGH25N100U1; IXGH25N100AU1;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 50A I(C), 1000V V(BR)CES, N-CHANNEL, TO-247. FREE 2 YEAR RADWELL WARRANTY
IGBT 1000V 50A 200W TO247AD
| DigiKey | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGH25N100A-ND | 1049586-IXGH25N100A | 22423702 | IXGH25N100A |
| Product Name | Single IGBTs | IGBTs - Single - IXGH25N100A | Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
