Manufacturer: IXYS
Win Source Part Number: 1049560-IXGH12N90C
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 33nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 900V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 48A
Collector-emitter saturation voltage(Max): 3V @ 15V, 12A
Total Switching Energy(Ets): 320μJ (off)
Turn-on and Turn-off delay time: 20ns/135ns
Testing Conditions: 720V, 12A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
IGBT 900V 24A 100W TO247AD Product overview: IXGH12N90C from IXYS / Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 24A, 100W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 900V, 24A, 100W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXGH12N90C can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049560-IXGH12N90C | 279-IXGH12N90C | IXGH12N90C | 401-IXGH12N90C | IXGH12N90C |
| Product Name | IGBTs - Single - IXGH12N90C | 900V 24A 100W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT 900V 24A 100W TO247AD | IGBT Transistors |
| VCE(on) | 3 volts | ||||
| PD | 100000 milliwatts | 100000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-247; SOT3; TO-247AD (IXGH) | Tube | |||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube |