Zilog IGBTs - Single - IXGH120N30B3 IXGH120N30B3

Description
Manufacturer: IXYS Win Source Part Number: 1049554-IXGH120N30B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Maximum Power Dissipation: 540W Pulsed Collector Current: 480A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 120A Alternative Parts (Cross-Reference): FGH50N3; IXGH120N30C3; IXGH120N30B3; IXGH60N30C3; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049554-IXGH120N30B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Maximum Power Dissipation: 540W Pulsed Collector Current: 480A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 120A Alternative Parts (Cross-Reference): FGH50N3; IXGH120N30C3; IXGH120N30B3; IXGH60N30C3; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXGH120N30B3 - 1049554-IXGH120N30B3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH120N30B3
1049554-IXGH120N30B3
IGBTs - Single - IXGH120N30B3 1049554-IXGH120N30B3
Manufacturer: IXYS Win Source Part Number: 1049554-IXGH120N30B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Maximum Power Dissipation: 540W Pulsed Collector Current: 480A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 120A Alternative Parts (Cross-Reference): FGH50N3; IXGH120N30C3; IXGH120N30B3; IXGH60N30C3; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049554-IXGH120N30B3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 225nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Power Dissipation: 540W
Pulsed Collector Current: 480A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 120A
Alternative Parts (Cross-Reference): FGH50N3; IXGH120N30C3; IXGH120N30B3; IXGH60N30C3;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
IGBT 300V 75A 540W TO247 - 401-IXGH120N30B3 - Utmel Electronic Limited
Hong Kong, China
IGBT 300V 75A 540W TO247
401-IXGH120N30B3
IGBT 300V 75A 540W TO247 401-IXGH120N30B3
IGBT 300V 75A 540W TO247

IGBT 300V 75A 540W TO247

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXGH120N30B3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH120N30B3
Discrete Semiconductor Products - Transistors - IGBTs IXGH120N30B3
IGBT 300V 75A 540W TO247

IGBT 300V 75A 540W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049554-IXGH120N30B3 401-IXGH120N30B3 IXGH120N30B3
Product Name IGBTs - Single - IXGH120N30B3 IGBT 300V 75A 540W TO247 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.7 volts 1.42 volts
PD 540000 milliwatts 540000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXGH)
Packing Method Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
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