Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFY4N60P3 IXFY4N60P3

Description
Manufacturer: IXYS Win Source Part Number: 1049549-IXFY4N60P3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 70
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Description
Manufacturer: IXYS Win Source Part Number: 1049549-IXFY4N60P3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 70
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFY4N60P3 - 1049549-IXFY4N60P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFY4N60P3
1049549-IXFY4N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFY4N60P3 1049549-IXFY4N60P3
Manufacturer: IXYS Win Source Part Number: 1049549-IXFY4N60P3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 70

Manufacturer: IXYS
Win Source Part Number: 1049549-IXFY4N60P3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 114W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.9nC @ 10V
Max Input Capacitance: 365pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 70

Buy Now Datasheet
Single FETs, MOSFETs - IXFY4N60P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFY4N60P3-ND
Single FETs, MOSFETs IXFY4N60P3-ND
N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252AA

N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
MOSFET N-CH 600V 4A TO-252 - 401-IXFY4N60P3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 4A TO-252
401-IXFY4N60P3
MOSFET N-CH 600V 4A TO-252 401-IXFY4N60P3
MOSFET N-CH 600V 4A TO-252

MOSFET N-CH 600V 4A TO-252

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFY4N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFY4N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFY4N60P3
MOSFET N-CH 600V 4A TO252

MOSFET N-CH 600V 4A TO252

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode

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Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049549-IXFY4N60P3 IXFY4N60P3-ND 401-IXFY4N60P3 IXFY4N60P3 IXFY4N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFY4N60P3 Single FETs, MOSFETs MOSFET N-CH 600V 4A TO-252 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 114000 milliwatts 114000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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