Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N30 IXFX90N30

Description
Manufacturer: IXYS Win Source Part Number: 1049547-IXFX90N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049547-IXFX90N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N30 - 1049547-IXFX90N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N30
1049547-IXFX90N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N30 1049547-IXFX90N30
Manufacturer: IXYS Win Source Part Number: 1049547-IXFX90N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049547-IXFX90N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 8mA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 10000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IXFX90N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX90N30-ND
Single FETs, MOSFETs IXFX90N30-ND
N-Channel 300V 90A (Tc) 560W (Tc) Through Hole PLUS247™-3

N-Channel 300V 90A (Tc) 560W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 300V 90A

MOSFET 300V 90A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX90N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX90N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX90N30
MOSFET N-CH 300V 90A PLUS247-3

MOSFET N-CH 300V 90A PLUS247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049547-IXFX90N30 IXFX90N30-ND IXFX90N30 IXFX90N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N30 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 560000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single IGBTs - 448-AIKB30N65DF5ATMA1CT-ND - DigiKey
Infineon Technologies AG
Specs
TJ -40 to 175 C (-40 to 347 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Cut Tape (CT)
View Details
5 suppliers
GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 4000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details