Manufacturer: IXYS
Win Source Part Number: 1191157-IXFX64N50P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Family Name: IXFX64N50P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8700pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 85 mOhm @ 32A, 10V
Alternative Parts (Cross-Reference): STW43NM50N; APT50M85LVFRG; APT50M85B2VRG;
Introduction Date: May 07, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
MOSFET N-CH 500V 64A PLUS247-3
N-Channel 500V 64A (Tc) 830W (Tc) Through Hole PLUS247™-3
MOSFET N-CH 500V 64A PLUS247-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1191157-IXFX64N50P | IXFX64N50P | IXFX64N50P-ND | IXFX64N50P | IXFX64N50P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX64N50P | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| QG | 150 nC | ||||
| PD | 830000 milliwatts | 830000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 Variant | TO-247; TO-247-3 Variant | TO-247; TO-247-3 Variant | |
| Packing Method | Tube; Tube | Tube; Tube |
