Zilog FETs - Single - IXFX55N50 IXFX55N50

Description
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Suppliers

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Product
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Supplier Links
FETs - Single - IXFX55N50 - 1191156-IXFX55N50 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFX55N50
1191156-IXFX55N50
FETs - Single - IXFX55N50 1191156-IXFX55N50
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191156-IXFX55N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 625W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 55A
Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

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Sheung Wan, Hong Kong
MOSFET 500V 55A

MOSFET 500V 55A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX55N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX55N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX55N50
MOSFET N-CH 500V 55A PLUS247-3

MOSFET N-CH 500V 55A PLUS247-3

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191156-IXFX55N50 IXFX55N50 IXFX55N50
Product Name FETs - Single - IXFX55N50 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
QG 330 nC
PD 625000 milliwatts
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