Zilog FETs - Single - IXFX55N50 IXFX55N50

Description
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFX55N50 - 1191156-IXFX55N50 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFX55N50
1191156-IXFX55N50
FETs - Single - IXFX55N50 1191156-IXFX55N50
Manufacturer: IXYS Win Source Part Number: 1191156-IXFX55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 625W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 55A Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191156-IXFX55N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 625W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 55A
Rds On (Maximum) at Id, Vgs: 80mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX55N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX55N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX55N50
MOSFET N-CH 500V 55A PLUS247-3

MOSFET N-CH 500V 55A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 55A

MOSFET 500V 55A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191156-IXFX55N50 IXFX55N50 IXFX55N50
Product Name FETs - Single - IXFX55N50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
QG 330 nC
PD 625000 milliwatts
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