Zilog Single FETs, MOSFETs IXFX32N50Q

Description
N-Channel 500V 32A (Tc) 416W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 500V 32A (Tc) 416W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXFX32N50Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX32N50Q-ND
Single FETs, MOSFETs IXFX32N50Q-ND
N-Channel 500V 32A (Tc) 416W (Tc) Through Hole PLUS247™-3

N-Channel 500V 32A (Tc) 416W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX32N50Q - 139637-IXFX32N50Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX32N50Q
139637-IXFX32N50Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX32N50Q 139637-IXFX32N50Q
Manufacturer: IXYS Win Source Part Number: 139637-IXFX32N50Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 416W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3950pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 139637-IXFX32N50Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 416W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX32N50Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX32N50Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX32N50Q
MOSFET N-CH 500V 32A PLUS247-3

MOSFET N-CH 500V 32A PLUS247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFX32N50Q-ND 139637-IXFX32N50Q IXFX32N50Q
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX32N50Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant TO-247; SOT3; PLUS247-3 TO-247; TO-247-3 Variant
V(BR)DSS 500 volts
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