Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX27N80Q IXFX27N80Q

Description
Manufacturer: IXYS Win Source Part Number: 1191148-IXFX27N80Q Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Family Name: IXFX27N80Q Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: PLUS247-3 Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 320 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW11NM80; APT8030B2VR; APT8030B2VRG; Introduction Date: October 09, 2000 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191148-IXFX27N80Q Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Family Name: IXFX27N80Q Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: PLUS247-3 Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 320 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW11NM80; APT8030B2VR; APT8030B2VRG; Introduction Date: October 09, 2000 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX27N80Q - 1191148-IXFX27N80Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX27N80Q
1191148-IXFX27N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX27N80Q 1191148-IXFX27N80Q
Manufacturer: IXYS Win Source Part Number: 1191148-IXFX27N80Q Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Family Name: IXFX27N80Q Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: PLUS247-3 Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 500W (Tc) Rds On (Maximum) @ Id, Vgs: 320 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW11NM80; APT8030B2VR; APT8030B2VRG; Introduction Date: October 09, 2000 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191148-IXFX27N80Q
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Family Name: IXFX27N80Q
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 500W (Tc)
Rds On (Maximum) @ Id, Vgs: 320 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW11NM80; APT8030B2VR; APT8030B2VRG;
Introduction Date: October 09, 2000
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFX27N80Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX27N80Q-ND
Single FETs, MOSFETs IXFX27N80Q-ND
N-Channel 800V 27A (Tc) 500W (Tc) Through Hole PLUS247™-3

N-Channel 800V 27A (Tc) 500W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX27N80Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX27N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX27N80Q
MOSFET N-CH 800V 27A PLUS247-3

MOSFET N-CH 800V 27A PLUS247-3

Supplier's Site
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MOSFET 27 Amps 800V 0.32 Rds

MOSFET 27 Amps 800V 0.32 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191148-IXFX27N80Q IXFX27N80Q-ND IXFX27N80Q IXFX27N80Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX27N80Q Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
QG 170 nC
PD 500000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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