Manufacturer: IXYS
Win Source Part Number: 1191146-IXFX21N100Q
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Family Name: IXFX21N100Q
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 500W (Tc)
Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): APT10050B2VR; APT10050B2VFR; APT10050LVFR;
Introduction Date: October 09, 2000
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 1000V 21A PLUS247-3
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191146-IXFX21N100Q | IXFX21N100Q | IXFX21N100Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX21N100Q | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| QG | 170 nC |