Zilog Single FETs, MOSFETs IXFT36N50P

Description
MOSFET N-CH 500V 36A TO268
Request a Quote Datasheet
Description
MOSFET N-CH 500V 36A TO268
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFT36N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFT36N50P
Single FETs, MOSFETs IXFT36N50P
MOSFET N-CH 500V 36A TO268

MOSFET N-CH 500V 36A TO268

Supplier's Site Datasheet
FETs - Single - IXFT36N50P - 813626-IXFT36N50P - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFT36N50P
813626-IXFT36N50P
FETs - Single - IXFT36N50P 813626-IXFT36N50P
Manufacturer: IXYS Win Source Part Number: 813626-IXFT36N50P Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500V Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Power Dissipation (Maximum): 540W (Tc) Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 170mOhm at 500mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 93nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 5500pF at 25V Current - Continuous Drain (Id) at 25°C: 36A (Tc) Vgs(th) (Maximum) at Id: 5V at 4mA Maximum Vgs: ±30V

Manufacturer: IXYS
Win Source Part Number: 813626-IXFT36N50P
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500V
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Maximum): 540W (Tc)
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 170mOhm at 500mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 93nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5500pF at 25V
Current - Continuous Drain (Id) at 25°C: 36A (Tc)
Vgs(th) (Maximum) at Id: 5V at 4mA
Maximum Vgs: ±30V

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Single FETs, MOSFETs - IXFT36N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFT36N50P-ND
Single FETs, MOSFETs IXFT36N50P-ND
N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount TO-268AA

N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 36A

MOSFET 500V 36A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFT36N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFT36N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFT36N50P
MOSFET N-CH 500V 36A TO268

MOSFET N-CH 500V 36A TO268

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFT36N50P 813626-IXFT36N50P IXFT36N50P-ND IXFT36N50P IXFT36N50P
Product Name Single FETs, MOSFETs FETs - Single - IXFT36N50P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts
IDSS 36000 milliamps
PD 540000 milliwatts 540000 milliwatts
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