MOSFET N-CH 1200V 16A TO268
Manufacturer: IXYS
Win Source Part Number: 810397-IXFT16N120P
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200V
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Maximum): 660W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 950mOhm at 500mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 6900pF at 25V
Current - Continuous Drain (Id) at 25°C: 16A (Tc)
Vgs(th) (Maximum) at Id: 6.5V at 1mA
Maximum Vgs: ±30V
N-Channel 1200V 16A (Tc) 660W (Tc) Surface Mount TO-268AA
MOSFET N-CH 1200V 16A TO268
Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT16N120P | 810397-IXFT16N120P | IXFT16N120P-ND | IXFT16N120P | IXFT16N120P | 401-IXFT16N120P |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXFT16N120P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268 |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 1200 volts | 1200 volts | ||||
| IDSS | 16000 milliamps | |||||
| PD | 660000 milliwatts | 660000 milliwatts | 660000 milliwatts |
