Zilog Single FETs, MOSFETs IXFT16N120P

Description
N-Channel 1200V 16A (Tc) 660W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet
Description
N-Channel 1200V 16A (Tc) 660W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFT16N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFT16N120P-ND
Single FETs, MOSFETs IXFT16N120P-ND
N-Channel 1200V 16A (Tc) 660W (Tc) Surface Mount TO-268AA

N-Channel 1200V 16A (Tc) 660W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
FETs - Single - IXFT16N120P - 810397-IXFT16N120P - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFT16N120P
810397-IXFT16N120P
FETs - Single - IXFT16N120P 810397-IXFT16N120P
Manufacturer: IXYS Win Source Part Number: 810397-IXFT16N120P Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200V Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Power Dissipation (Maximum): 660W (Tc) Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 950mOhm at 500mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 6900pF at 25V Current - Continuous Drain (Id) at 25°C: 16A (Tc) Vgs(th) (Maximum) at Id: 6.5V at 1mA Maximum Vgs: ±30V

Manufacturer: IXYS
Win Source Part Number: 810397-IXFT16N120P
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200V
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Maximum): 660W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 950mOhm at 500mA, 10V
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 6900pF at 25V
Current - Continuous Drain (Id) at 25°C: 16A (Tc)
Vgs(th) (Maximum) at Id: 6.5V at 1mA
Maximum Vgs: ±30V

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Single FETs, MOSFETs - IXFT16N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFT16N120P
Single FETs, MOSFETs IXFT16N120P
MOSFET N-CH 1200V 16A TO268

MOSFET N-CH 1200V 16A TO268

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 16 Amps 1200V 1 Rds

MOSFET 16 Amps 1200V 1 Rds

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Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268 - 401-IXFT16N120P - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268
401-IXFT16N120P
Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268 401-IXFT16N120P
Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268

Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFT16N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFT16N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFT16N120P
MOSFET N-CH 1200V 16A TO268

MOSFET N-CH 1200V 16A TO268

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFT16N120P-ND 810397-IXFT16N120P IXFT16N120P IXFT16N120P 401-IXFT16N120P IXFT16N120P
Product Name Single FETs, MOSFETs FETs - Single - IXFT16N120P Single FETs, MOSFETs MOSFET Trans MOSFET N-CH 1.2KV 16A 3-Pin(2+Tab) TO-268 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-268-3, D3PAK (2 Leads + Tab), TO-268AA SOT3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
QG 120 nC
PD 660000 milliwatts 660000 milliwatts 660000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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