Zilog Single FETs, MOSFETs IXFR180N10

Description
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet
Description
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFR180N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFR180N10-ND
Single FETs, MOSFETs IXFR180N10-ND
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™

N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 - 1049514-IXFR180N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10
1049514-IXFR180N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 1049514-IXFR180N10
Manufacturer: IXYS Win Source Part Number: 1049514-IXFR180N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Dimension: ISOPLUS247 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 165A (Tc) Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 400nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 90A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049514-IXFR180N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOPLUS247
Dimension: ISOPLUS247
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 165A (Tc)
Gate-Source Threshold Voltage: 4V @ 8mA
Max Gate Charge: 400nC @ 10V
Max Input Capacitance: 9400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFR180N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFR180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFR180N10
MOSFET N-CH 100V 165A ISOPLUS247

MOSFET N-CH 100V 165A ISOPLUS247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 165A

MOSFET 100V 165A

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFR180N10-ND 1049514-IXFR180N10 IXFR180N10 IXFR180N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 SOT3; ISOPLUS247 TO-247; TO-247-3
V(BR)DSS 100 volts
Unlock Full Specs
to access all available technical data