Zilog Single FETs, MOSFETs IXFR180N10

Description
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™
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Description
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFR180N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFR180N10-ND
Single FETs, MOSFETs IXFR180N10-ND
N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™

N-Channel 100V 165A (Tc) 400W (Tc) Through Hole ISOPLUS247™

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 - 1049514-IXFR180N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10
1049514-IXFR180N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 1049514-IXFR180N10
Manufacturer: IXYS Win Source Part Number: 1049514-IXFR180N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS247 Dimension: ISOPLUS247 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 165A (Tc) Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 400nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 90A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049514-IXFR180N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOPLUS247
Dimension: ISOPLUS247
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 165A (Tc)
Gate-Source Threshold Voltage: 4V @ 8mA
Max Gate Charge: 400nC @ 10V
Max Input Capacitance: 9400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 90A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET 100V 165A

MOSFET 100V 165A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFR180N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFR180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFR180N10
MOSFET N-CH 100V 165A ISOPLUS247

MOSFET N-CH 100V 165A ISOPLUS247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFR180N10-ND 1049514-IXFR180N10 IXFR180N10 IXFR180N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR180N10 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 SOT3; ISOPLUS247 TO-247; TO-247-3
V(BR)DSS 100 volts
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