Zilog Single FETs, MOSFETs IXFR120N20

Description
N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet
Description
N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXFR120N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFR120N20-ND
Single FETs, MOSFETs IXFR120N20-ND
N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™

N-Channel 200V 105A (Tc) 417W (Tc) Through Hole ISOPLUS247™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR120N20 - 1191129-IXFR120N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR120N20
1191129-IXFR120N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR120N20 1191129-IXFR120N20
Manufacturer: IXYS Win Source Part Number: 1191129-IXFR120N20 Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: ISOPLUS247 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Family Name: IXFR120N20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS247 Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9100pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 417W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): IRFP4127PbF; STW75NF20; Introduction Date: September 25, 2000 ECCN: EAR99 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191129-IXFR120N20
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: ISOPLUS247
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Family Name: IXFR120N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: ISOPLUS247
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9100pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 417W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): IRFP4127PbF; STW75NF20;
Introduction Date: September 25, 2000
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-CH 200V 105A ISOPLUS247 - 401-IXFR120N20 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 105A ISOPLUS247
401-IXFR120N20
MOSFET N-CH 200V 105A ISOPLUS247 401-IXFR120N20
MOSFET N-CH 200V 105A ISOPLUS247

MOSFET N-CH 200V 105A ISOPLUS247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V 105A

MOSFET 200V 105A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFR120N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFR120N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFR120N20
MOSFET N-CH 200V 105A ISOPLUS247

MOSFET N-CH 200V 105A ISOPLUS247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFR120N20-ND 1191129-IXFR120N20 401-IXFR120N20 IXFR120N20 IXFR120N20
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFR120N20 MOSFET N-CH 200V 105A ISOPLUS247 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-247; TO-247-3 SOT3 TO-247; TO-247-3
QG 360 nC
PD 417000 milliwatts 400000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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