Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFQ20N50P3

Description
Win Source Part Number: 1029970-IXFQ20N50P3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar3™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Power Dissipation (Max): 380W (Tc) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHG22N50D-E3; WPB4001-1E; SIHG22N50D-GE3; FDP22N50N; FDA20N50-F109; SIHF18N50D-E3; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXFQ20N50P3 Base Product Number: IXFQ20 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1029970-IXFQ20N50P3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar3™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Power Dissipation (Max): 380W (Tc) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHG22N50D-E3; WPB4001-1E; SIHG22N50D-GE3; FDP22N50N; FDA20N50-F109; SIHF18N50D-E3; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXFQ20N50P3 Base Product Number: IXFQ20 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1029970-IXFQ20N50P3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1029970-IXFQ20N50P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1029970-IXFQ20N50P3
Win Source Part Number: 1029970-IXFQ20N50P3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar3™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Power Dissipation (Max): 380W (Tc) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHG22N50D-E3; WPB4001-1E; SIHG22N50D-GE3; FDP22N50N; FDA20N50-F109; SIHF18N50D-E3; ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXFQ20N50P3 Base Product Number: IXFQ20 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1029970-IXFQ20N50P3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar3™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Power Dissipation (Max): 380W (Tc)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHG22N50D-E3; WPB4001-1E; SIHG22N50D-GE3; FDP22N50N; FDA20N50-F109; SIHF18N50D-E3;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFQ20N50P3
Base Product Number: IXFQ20
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXFQ20N50P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFQ20N50P3-ND
Single FETs, MOSFETs IXFQ20N50P3-ND
N-Channel 500V 20A (Tc) 380W (Tc) Through Hole TO-3P

N-Channel 500V 20A (Tc) 380W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFQ20N50P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFQ20N50P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P

MOSFET N-CH 500V 20A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Polar3 HiPerFET Power MOSFET

MOSFET Polar3 HiPerFET Power MOSFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1029970-IXFQ20N50P3 IXFQ20N50P3-ND IXFQ20N50P3 IXFQ20N50P3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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