N-Channel 1000V 7A (Tc) 300W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1191128-IXFP7N100P
Series: HiPerFET, PolarP2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: IXFP7N100P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 6V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2590pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V
Alternative Parts (Cross-Reference): STP5N105K5; STP9NK90Z; STP7N95K3;
Introduction Date: October 29, 2009
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MOSFET N-CH 1000V 7A TO220AB
MOSFET N-CH 1000V 7A TO220AB
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFP7N100P-ND | 1191128-IXFP7N100P | IXFP7N100P | IXFP7N100P | IXFP7N100P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP7N100P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| QG | 47 nC | ||||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
