N-Channel 1000V 5A (Tc) 250W (Tc) Through Hole TO-220-3
Win Source Part Number: 1066180-IXFP5N100P
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STP6NK90Z; STP6N120K3; STP8NK100Z; SPP06N80C3XKSA1; IPP90R1K2C3XKSA1; FQP6N80;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFP5N100P
Base Product Number: IXFP5N100
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 1000V 5A TO220AB
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFP5N100P-ND | 1066180-IXFP5N100P | IXFP5N100P | IXFP5N100P |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |