Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3 IXFP4N60P3

Description
Manufacturer: IXYS Win Source Part Number: 1049507-IXFP4N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3 - 1049507-IXFP4N60P3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFP4N60P3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP4N60P3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 600V 4A TO-220AB - 401-IXFP4N60P3 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049507-IXFP4N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3 - 1049507-IXFP4N60P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3
1049507-IXFP4N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3 1049507-IXFP4N60P3
Manufacturer: IXYS Win Source Part Number: 1049507-IXFP4N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 114W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.9nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049507-IXFP4N60P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 114W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.9nC @ 10V
Max Input Capacitance: 365pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V 4A MOSFET Transistor
278-IXFP4N60P3
600V 4A MOSFET Transistor 278-IXFP4N60P3
MOSFET N-CH 600V 4A TO220AB Product overview: IXFP4N60P3 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP4N60P3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 4A TO220AB Product overview: IXFP4N60P3 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFP4N60P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFP4N60P3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP4N60P3-ND
Single FETs, MOSFETs IXFP4N60P3-ND
N-Channel 600V 4A (Tc) 114W (Tc) Through Hole TO-220-3

N-Channel 600V 4A (Tc) 114W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP4N60P3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP4N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP4N60P3
MOSFET N-CH 600V 4A TO220AB

MOSFET N-CH 600V 4A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFP4N60P3
MOSFET IXFP4N60P3
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode

MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode

Buy Now
MOSFET N-CH 600V 4A TO-220AB - 401-IXFP4N60P3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 4A TO-220AB
401-IXFP4N60P3
MOSFET N-CH 600V 4A TO-220AB 401-IXFP4N60P3
MOSFET N-CH 600V 4A TO-220AB

MOSFET N-CH 600V 4A TO-220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049507-IXFP4N60P3 278-IXFP4N60P3 IXFP4N60P3-ND IXFP4N60P3 IXFP4N60P3 401-IXFP4N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N60P3 600V 4A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 600V 4A TO-220AB
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 114000 milliwatts 114 milliwatts 114000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3
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