N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1191127-IXFP4N100P
Series: HiPerFET, PolarP2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Family Name: IXFP4N100P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1456pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): APT1003RKFLLG; STP4N90K5; STP5N95K5;
Introduction Date: July 08, 2010
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MOSFET N-CH 1000V 4A TO220AB
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP4N100P-ND | 1191127-IXFP4N100P | IXFP4N100P | IXFP4N100P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP4N100P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | |
| QG | 26 nC |
