Zilog Single FETs, MOSFETs IXFP14N60P

Description
N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXFP14N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP14N60P-ND
Single FETs, MOSFETs IXFP14N60P-ND
N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220-3

N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP14N60P - 1191126-IXFP14N60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP14N60P
1191126-IXFP14N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP14N60P 1191126-IXFP14N60P
Manufacturer: IXYS Win Source Part Number: 1191126-IXFP14N60P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXFP 14N60P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 550 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): STP9NM60; AOT12N60; STP11N65M2; Introduction Date: May 13, 2006 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1191126-IXFP14N60P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Family Name: IXFP 14N60P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 550 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): STP9NM60; AOT12N60; STP11N65M2;
Introduction Date: May 13, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
MOSFET N-CH 600V 14A TO-220 - 401-IXFP14N60P - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 14A TO-220
401-IXFP14N60P
MOSFET N-CH 600V 14A TO-220 401-IXFP14N60P
MOSFET N-CH 600V 14A TO-220

MOSFET N-CH 600V 14A TO-220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP14N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP14N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP14N60P
MOSFET N-CH 600V 14A TO220AB

MOSFET N-CH 600V 14A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFP14N60P-ND 1191126-IXFP14N60P 401-IXFP14N60P IXFP14N60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP14N60P MOSFET N-CH 600V 14A TO-220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
QG 36 nC
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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