The IXFN75N120SK is a 1200 V, 75 A silicon carbide MOSFET designed for high-frequency switching applications such as solar inverters, UPS systems, and motor drives. It is packaged in a SOT-227B (miniBLOC) case with a baseplate and has physical dimensions of 37.80 mm to 38.23 mm in height and 31.50 mm to 31.88 mm in width. The device features a typical on-resistance of 21 mΩ at 25 °C and a gate-source voltage rating of -4 V to 15 V. It includes a real Kelvin source connection, supports isolation voltages of up to 2500 V AC, and meets UL 94V-0 flammability requirements. The maximum junction temperature is 175 °C, and the thermal resistance from junction to case is 0.57 K/W. The package is RoHS compliant with nitride isolation and epoxy encapsulation.
SIC AND MULTICHIP DISCRETE
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 238-IXFN75N120SK-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |