Littelfuse, Inc. Single FETs, MOSFETs IXFN55N50F

Description
MOSFET N-CH 500V 55A SOT227B
Request a Quote Datasheet
Description
MOSFET N-CH 500V 55A SOT227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN55N50F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN55N50F
Single FETs, MOSFETs IXFN55N50F
MOSFET N-CH 500V 55A SOT227B

MOSFET N-CH 500V 55A SOT227B

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN55N50F - 1191121-IXFN55N50F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN55N50F
1191121-IXFN55N50F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN55N50F 1191121-IXFN55N50F
Manufacturer: IXYS Win Source Part Number: 1191121-IXFN55N50F Series: HiPerRF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Family Name: IXFN55N50F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 600W (Tc) Rds On (Maximum) @ Id, Vgs: 85 mOhm @ 27.5A, 10V Alternative Parts (Cross-Reference): FA57SA50LC; FA57SA50LCPBF; STE53NA50; Introduction Date: September 14, 2001 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Unknown Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191121-IXFN55N50F
Series: HiPerRF
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Family Name: IXFN55N50F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 600W (Tc)
Rds On (Maximum) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): FA57SA50LC; FA57SA50LCPBF; STE53NA50;
Introduction Date: September 14, 2001
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Unknown
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
500V 55A MOSFET Transistor
278-IXFN55N50F
500V 55A MOSFET Transistor 278-IXFN55N50F
MOSFET N-CH 500V 55A SOT227B Product overview: IXFN55N50F from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN55N50F can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 55A SOT227B Product overview: IXFN55N50F from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 55A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN55N50F can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET IXFN55N50F 500V 55A HIPERFET F-Class HiPerRF Capable MOSFETs

MOSFET IXFN55N50F 500V 55A HIPERFET F-Class HiPerRF Capable MOSFETs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN55N50F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN55N50F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN55N50F
MOSFET N-CH 500V 55A SOT227B

MOSFET N-CH 500V 55A SOT227B

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFN55N50F 1191121-IXFN55N50F 278-IXFN55N50F IXFN55N50F IXFN55N50F
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN55N50F 500V 55A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 55000 milliamps
PD 600000 milliwatts 600000 milliwatts 600000 milliwatts
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